4MN10CH-TL-E onsemi Transistors - Bipolar (BJT) - RF

Mfr: onsemi
Series: -
Package: Bulk
Product Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 200V
Frequency - Transition: 400MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Current - Collector (Ic) (Max): 100mA
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: 3-CPH