HFA3096B96 Harris Corporation Transistors - Bipolar (BJT) - RF

Mfr: Harris Corporation
Series: -
Package: Bulk
Product Status: Active
Transistor Type: 3 NPN + 2 PNP
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 8GHz, 5.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V, 20 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154\ 3.90mm Width)
Supplier Device Package: 16-SOIC