HFA3127MJ/883 Harris Corporation Transistors - Bipolar (BJT) - RF

Mfr: Harris Corporation
Series: -
Package: Bulk
Product Status: Active
Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: -55°C~125°C(TJ)
Mounting Type: Through Hole
Package / Case: 16-CDIP (0.300\ 7.62mm)
Supplier Device Package: 16-CERDIP