BFP843H6327 Infineon Technologies Transistors - Bipolar (BJT) - RF

Mfr: Infineon Technologies
Series: -
Package: Bulk
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.25V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Gain: 24.5dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Current - Collector (Ic) (Max): 55mA
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343