BGR420H6327 Infineon Technologies Transistors - Bipolar (BJT) - RF

Mfr: Infineon Technologies
Series: -
Package: Bulk
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 13V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
Gain: 26dB
Power - Max: 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 25mA
Operating Temperature: -65°C~150°C(TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4-1