BFR750L3RHE6327 Infineon Technologies Transistors - Bipolar (BJT) - RF

Mfr: Infineon Technologies
Series: -
Package: Bulk
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Gain: 21dB
Power - Max: 360mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
Current - Collector (Ic) (Max): 90mA
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3