NTE2401 NTE Electronics, Inc Transistors - Bipolar (BJT) - RF

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 450MHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 60Hz ~ 149Hz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23