HSG1002VE-TL-E Renesas Electronics America Inc Transistors - Bipolar (BJT) - RF

Mfr: Renesas Electronics America Inc
Series: -
Package: Bulk
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 38GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain: 8dB ~ 19.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: 4-MFPAK