BFP640FESDH6327XTSA1 Infineon Technologies Transistors - Bipolar (BJT) - RF

Mfr: Infineon Technologies
Series: -
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Gain: 8B ~ 30.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP
Base Product Number: BFP640