MPSH17 NTE Electronics, Inc Transistors - Bipolar (BJT) - RF

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 6dB @ 200MHz
Gain: 24dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92 (TO-226)