NTE229 NTE Electronics, Inc Transistors - Bipolar (BJT) - RF

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): 6dB @ 45MHz
Gain: 28dB
Power - Max: 425mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92