NTE2687 NTE Electronics, Inc Transistors - Bipolar (BJT) - RF

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 450V
Frequency - Transition: 20MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 45W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 150°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220