NTE78 NTE Electronics, Inc Transistors - Bipolar (BJT) - RF

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 100mA, 10V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 150°C(TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300\ 7.62mm)
Supplier Device Package: 16-DIP