NTE55 NTE Electronics, Inc Transistors - Bipolar (BJT) - RF

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 150V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
Current - Collector (Ic) (Max): 8A
Operating Temperature: -65°C~150°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220