NTE195A NTE Electronics, Inc Transistors - Bipolar (BJT) - RF

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 400mA, 2V
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39