NTE395 NTE Electronics, Inc Transistors - Bipolar (BJT) - RF

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 2.3GHz
Noise Figure (dB Typ @ f): 2.5dB ~ 4dB @ 200MHz ~ 800MHz
Gain: 16dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 200°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72