NTE65 NTE Electronics, Inc Transistors - Bipolar (BJT) - RF

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2.4dB ~ 3dB @ 500MHz ~ 1GHz
Gain: 18dB
Power - Max: 180mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 14mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Lead
Supplier Device Package: 3-SMD