NTE299 NTE Electronics, Inc Transistors - Bipolar (BJT) - RF

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 10V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 125°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-202 Long Tab
Supplier Device Package: TO-202