NTE77 NTE Electronics, Inc Transistors - Bipolar (BJT) - RF

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 1.8GHz
Noise Figure (dB Typ @ f): 2.7dB ~ 7dB @ 200MHz ~ 216MHz
Gain: 7.2dB
Power - Max: 3.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: 200°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39