NTE15 NTE Electronics, Inc Transistors - Bipolar (BJT) - RF

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 19V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 125°C(TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: 3-SIP