NTE313 NTE Electronics, Inc Transistors - Bipolar (BJT) - RF

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 530MHz
Noise Figure (dB Typ @ f): 2.5dB @ 200MHz
Gain: 23dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Lead
Supplier Device Package: 3-SMD