MT3S113TU,LF Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - RF

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.3V
Frequency - Transition: 11.2GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Gain: 12.5dB
Power - Max: 900mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Lead
Supplier Device Package: UFM
Base Product Number: MT3S113