RN1709JE(TE85L,F) Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Arrays Pre-Biased

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV
Base Product Number: RN1709