Menu

RN1701,LF Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Arrays Pre-Biased

{{ product.price_format }}
{{ product.origin_price_format }}
Quantity:
Model: {{ product.model }}

{{ variable.name }}

{{ value.name }}
Request a quote

Description of your requirements:

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV
Base Product Number: RN1701

Datasheet

Cancel Submit
Add reviews
Add first reviews
  • {{ item.user_name }}
    {{ item.content }}
    Loading...
    {{ item.created_at }} {{ item.order_product_name }}