HBDM60V600X-7 Diodes Incorporated Transistors - Bipolar (BJT) - Arrays

Mfr: Diodes Incorporated
Series: -
Package: Tape & Reel (TR)
Product Status: Active
Transistor Type: 1 NPN, 1 PNP (H-Bridge)
Current - Collector (Ic) (Max): 600mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 60V, 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 100mA, 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA, 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 1V / 100 @ 150mA, 10V
Power - Max: 200mW
Frequency - Transition: -
Operating Temperature: -55°C~150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363