HN1C03F-B(TE85L,F) Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Arrays

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Active
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Power - Max: 300mW
Frequency - Transition: 30MHz
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6
Base Product Number: HN1C03