PEMX1,315 NXP USA Inc. Transistors - Bipolar (BJT) - Arrays

Mfr: NXP USA Inc.
Series: -
Package: Bulk
Product Status: Active
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666