Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Drain to Source Voltage (Vdss): 35 V
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 A
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 30 Ohms
Power - Max: 625 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92
