APT35GP120B2DQ2G Microchip Technology Single IGBTs

Mfr: Microchip Technology
Series: POWER MOS 7®
Package: Tube
Product Status: Active
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 96 A
Current - Collector Pulsed (Icm): 140 A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Power - Max: 543 W
Switching Energy: 750µJ (on), 680µJ (off)
Input Type: Standard
Gate Charge: 150 nC
Td (on/off) @ 25°C: 16ns/95ns
Test Condition: 600V, 35A, 4.3Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Base Product Number: APT35GP120