GT50N322A Toshiba Semiconductor and Storage Single IGBTs

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tray
Product Status: Active
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Power - Max: 156 W
Switching Energy: -
Input Type: Standard
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 800 ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)