GT30N135SRA,S1E Toshiba Semiconductor and Storage Single IGBTs

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tube
Product Status: Active
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A
Power - Max: 348 W
Switching Energy: -, 1.3mJ (off)
Input Type: Standard
Gate Charge: 270 nC
Td (on/off) @ 25°C: -
Test Condition: 300V, 60A, 39Ohm, 15V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247