GT30J121(Q) Toshiba Semiconductor and Storage Single IGBTs

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tube
Product Status: Active
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 30A
Power - Max: 170 W
Switching Energy: 1mJ (on), 800µJ (off)
Input Type: Standard
Td (on/off) @ 25°C: 90ns/300ns
Test Condition: 300V, 30A, 24Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)
Base Product Number: GT30J121