SPP18P06PHXKSA1 Infineon Technologies Single FETs MOSFETs

Mfr: Infineon Technologies
Series: SIPMOS®
Packaging: Tube
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 81.1W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3
Base Product Number: SPP18P06