IRFU5410PBF International Rectifier Single FETs MOSFETs

Mfr: International Rectifier
Series: HEXFET®
Packaging: Bulk
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 66W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251AA)
Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA