SCT2H12NYTB Rohm Semiconductor Single FETs MOSFETs

Mfr: Rohm Semiconductor
Series: -
Packaging: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id: 4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Vgs (Max): +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
FET Feature: -
Power Dissipation (Max): 44W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Base Product Number: SCT2H12