SISS65DN-T1-GE3 Vishay Siliconix Single FETs MOSFETs

Mfr: Vishay Siliconix
Series: TrenchFET® Gen III
Packaging: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 25.9A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V
FET Feature: -
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Product Number: SISS65