SIE820DF-T1-GE3 Vishay Siliconix Single FETs MOSFETs

Mfr: Vishay Siliconix
Series: TrenchFET®
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Base Product Number: SIE820