Mfr: onsemi
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V
Vgs (Max): +19V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V
FET Feature: -
Power Dissipation (Max): 221W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Grade: Automotive
Qualification: AEC-Q101
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Base Product Number: NVHL060