IRFHM830TRPBF Infineon Technologies Single FETs MOSFETs

Mfr: Infineon Technologies
Series: HEXFET®
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 2.7W (Ta), 37W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN-Dual (3.3x3.3)
Package / Case: 8-PowerVDFN
Base Product Number: IRFHM830