GS120R045Q4 Goford Semiconductor Single FETs MOSFETs

Mfr: Goford Semiconductor
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Vgs(th) (Max) @ Id: 4V @ 10mA
Vgs (Max): -10V, +20V
Input Capacitance (Ciss) (Max) @ Vds: 2565 pF @ 1000 V
FET Feature: -
Power Dissipation (Max): 395W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4