SSM3J372R,LXHF Toshiba Semiconductor and Storage Single FETs MOSFETs

Mfr: Toshiba Semiconductor and Storage
Series: U-MOSVI
Package: Tape & Reel (TR) Cut Tape (CT)
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Vgs (Max): +6V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Operating Temperature: 150°C
Grade: Automotive
Qualification: AEC-Q101
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads