Mfr: Renesas Electronics Corporation
Series: -
Package: Bulk
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 15A
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-PowerSOP
Package / Case: 8-PowerSOIC (0.173\ 4.40mm Width)
