SCT3022KLHRC11 Rohm Semiconductor Single FETs MOSFETs

Mfr: Rohm Semiconductor
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Vgs (Max): +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V
FET Feature: -
Power Dissipation (Max): 427W
Operating Temperature: 175°C (TJ)
Grade: Automotive
Qualification: AEC-Q101
Mounting Type: Through Hole
Supplier Device Package: TO-247N
Package / Case: TO-247-3
Base Product Number: SCT3022