NC1M120C12HTNG NextGen Components Single FETs MOSFETs

Mfr: NextGen Components
Series: NC1M
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 3.5V @ 40mA
Vgs (Max): +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds: 8330 pF @ 1000 V
Power Dissipation (Max): 938W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4