DIW120SIC023-AQ Diotec Semiconductor Single FETs MOSFETs

Mfr: Diotec Semiconductor
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 1000 V
FET Feature: -
Power Dissipation (Max): 600W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Grade: Automotive
Qualification: AEC-Q101
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3