TP65H070G4LSG-TR Transphorm Single FETs MOSFETs

Mfr: Transphorm
Series: SuperGaN®
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
FET Feature: -
Power Dissipation (Max): 96W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-PQFN (8x8)
Package / Case: 3-PowerTDFN