GAN190-650FBEZ Nexperia USA Inc. Single FETs MOSFETs

Mfr: Nexperia USA Inc.
Series: -
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Vgs (Max): +7V, -1.4V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
FET Feature: -
Power Dissipation (Max): 125W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: DFN5060-5
Package / Case: 8-PowerVDFN
Base Product Number: GAN190