LSIC1MO120T0080-TU IXYS Single FETs MOSFETs

Mfr: IXYS
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7
Package / Case: -
Base Product Number: LSIC1MO120