G08N02H Goford Semiconductor Single FETs MOSFETs

Mfr: Goford Semiconductor
Series: -
Package: Tape & Reel (TR)
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 1.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA