Mfr: onsemi
Series: -
Package: Tape & Reel (TR)
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Grade: Automotive
Qualification: AEC-Q101
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: -
Base Product Number: NVBG095
